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IXTH 48N20
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
g fs
V DS = 10 V; I D = 0.5 ? I D25 , pulse test
24
32
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
3000
550
pF
pF
1
2
3
C rss
t d(on)
180
19
pF
ns
t r
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 I D25
19
ns
t d(off)
R G = 3.6 ? (External)
79
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
17
ns
Dim.
Millimeter
Inches
Q G(on)
110
nC
Min. Max.
A 4.7 5.3
Min. Max.
.185 .209
A 1
A 2
Q GS
Q GD
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 I D25
20
55
nC
nC
2.2 2.54
2.2 2.6
b 1.0 1.4
.087 .102
.059 .098
.040 .055
R thJC
0.45
K/W
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
R thCK
0.25
K/W
C .4 .8
D 20.80 21.46
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.610 .640
0.205 0.225
.780 .800
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
I S
I SM
V SD
t rr
Q rr
V GS = 0 V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 25 A, -di/dt = 100 A/ μ s, V R = 100 V
250
3.0
48
192
1.5
A
A
V
ns
μ C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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